Diodes Incorporated - DMJ70H601SK3-13

KEY Part #: K6392971

DMJ70H601SK3-13 Pricing (USD) [63780pcs Stock]

  • 1 pcs$0.61305

Part Number:
DMJ70H601SK3-13
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET N-CHANNEL 700V 8A TO252.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Single and Transistors - IGBTs - Modules ...
Competitive Advantage:
We specialize in Diodes Incorporated DMJ70H601SK3-13 electronic components. DMJ70H601SK3-13 can be shipped within 24 hours after order. If you have any demands for DMJ70H601SK3-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMJ70H601SK3-13 Product Attributes

Part Number : DMJ70H601SK3-13
Manufacturer : Diodes Incorporated
Description : MOSFET N-CHANNEL 700V 8A TO252
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 700V
Current - Continuous Drain (Id) @ 25°C : 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 600 mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 20.9nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 686pF @ 50V
FET Feature : -
Power Dissipation (Max) : 125W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-252, (D-Pak)
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

You May Also Be Interested In