Vishay Siliconix - SI7962DP-T1-E3

KEY Part #: K6522063

SI7962DP-T1-E3 Pricing (USD) [46382pcs Stock]

  • 1 pcs$0.84300
  • 3,000 pcs$0.78907

Part Number:
SI7962DP-T1-E3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET 2N-CH 40V 7.1A PPAK SO-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Diodes - Zener - Single, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Single, Transistors - Special Purpose, Diodes - Rectifiers - Single, Transistors - IGBTs - Arrays and Thyristors - SCRs ...
Competitive Advantage:
We specialize in Vishay Siliconix SI7962DP-T1-E3 electronic components. SI7962DP-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI7962DP-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7962DP-T1-E3 Product Attributes

Part Number : SI7962DP-T1-E3
Manufacturer : Vishay Siliconix
Description : MOSFET 2N-CH 40V 7.1A PPAK SO-8
Series : TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 7.1A
Rds On (Max) @ Id, Vgs : 17 mOhm @ 11.1A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : 1.4W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : PowerPAK® SO-8 Dual
Supplier Device Package : PowerPAK® SO-8 Dual