Diodes Incorporated - HTMN5130SSD-13

KEY Part #: K6522170

HTMN5130SSD-13 Pricing (USD) [92797pcs Stock]

  • 1 pcs$0.42136
  • 2,500 pcs$0.37135

Part Number:
HTMN5130SSD-13
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET 2N-CH 55V 2.6A 8SOIC.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Arrays and Transistors - FETs, MOSFETs - Single ...
Competitive Advantage:
We specialize in Diodes Incorporated HTMN5130SSD-13 electronic components. HTMN5130SSD-13 can be shipped within 24 hours after order. If you have any demands for HTMN5130SSD-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HTMN5130SSD-13 Product Attributes

Part Number : HTMN5130SSD-13
Manufacturer : Diodes Incorporated
Description : MOSFET 2N-CH 55V 2.6A 8SOIC
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 2.6A
Rds On (Max) @ Id, Vgs : 130 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 8.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 218.7pF @ 25V
Power - Max : 1.7W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO