N0604N-S19-AY Pricing (USD) [127239pcs Stock]
- 1 pcs$0.33284
- 1,000 pcs$0.33118
- Part Number:
- N0604N-S19-AY
- Manufacturer:
- Renesas Electronics America
- Detailed description:
- MOSFET N-CH 60V 82A TO-220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Diodes - RF, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Single and Diodes - Zener - Single ...
- Competitive Advantage:
- We specialize in Renesas Electronics America N0604N-S19-AY electronic components. N0604N-S19-AY can be shipped within 24 hours after order. If you have any demands for N0604N-S19-AY, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
N0604N-S19-AY Product Attributes
Part Number :
N0604N-S19-AY
Manufacturer :
Renesas Electronics America
Description :
MOSFET N-CH 60V 82A TO-220
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
82A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
6.5 mOhm @ 41A, 10V
Vgs(th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
75nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4150pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
1.5W (Ta), 156W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220 Isolated Tab
Package / Case :
TO-220-3 Isolated Tab
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