IPP65R125C7XKSA1 Pricing (USD) [18969pcs Stock]
- 1 pcs$2.34452
- 10 pcs$2.09156
- 100 pcs$1.71498
- 500 pcs$1.38870
- 1,000 pcs$1.17120
- Part Number:
- IPP65R125C7XKSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 650V 18A TO220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - Special Purpose, Transistors - FETs, MOSFETs - RF, Power Driver Modules, Transistors - JFETs, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPP65R125C7XKSA1 electronic components. IPP65R125C7XKSA1 can be shipped within 24 hours after order. If you have any demands for IPP65R125C7XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP65R125C7XKSA1 Product Attributes
Part Number :
IPP65R125C7XKSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 650V 18A TO220
Series :
CoolMOS™ C7
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
125 mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id :
4V @ 440µA
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1670pF @ 400V
FET Feature :
-
Power Dissipation (Max) :
101W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO220-3
Package / Case :
TO-220-3
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