SI8441DB-T2-E1 Pricing (USD) [151819pcs Stock]
- 1 pcs$0.24485
- 3,000 pcs$0.24363
- Part Number:
- SI8441DB-T2-E1
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET P-CH 20V 10.5A 2X2 6MFP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Arrays, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - Single, Transistors - Special Purpose and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SI8441DB-T2-E1 electronic components. SI8441DB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8441DB-T2-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8441DB-T2-E1 Product Attributes
Part Number :
SI8441DB-T2-E1
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CH 20V 10.5A 2X2 6MFP
Series :
TrenchFET®
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
1.2V, 4.5V
Rds On (Max) @ Id, Vgs :
80 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id :
700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 5V
Vgs (Max) :
±5V
Input Capacitance (Ciss) (Max) @ Vds :
600pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
2.77W (Ta), 13W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
6-Micro Foot™ (1.5x1)
Package / Case :
6-UFBGA
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