VP2206N3-G-P003 Pricing (USD) [60530pcs Stock]
- 1 pcs$0.66180
- 2,000 pcs$0.65851
- Part Number:
- VP2206N3-G-P003
- Manufacturer:
- Microchip Technology
- Detailed description:
- MOSFET P-CH 60V 640MA TO92-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Modules, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - JFETs and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in Microchip Technology VP2206N3-G-P003 electronic components. VP2206N3-G-P003 can be shipped within 24 hours after order. If you have any demands for VP2206N3-G-P003, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VP2206N3-G-P003 Product Attributes
Part Number :
VP2206N3-G-P003
Manufacturer :
Microchip Technology
Description :
MOSFET P-CH 60V 640MA TO92-3
Series :
-
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
640mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) :
5V, 10V
Rds On (Max) @ Id, Vgs :
900 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
450pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
740mW (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-92-3
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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