NTHD4P02FT1G Pricing (USD) [508821pcs Stock]
- 1 pcs$0.07269
- 6,000 pcs$0.04653
- Part Number:
- NTHD4P02FT1G
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET P-CH 20V 2.2A CHIPFET.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Single, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs - Modules, Diodes - Rectifiers - Arrays, Diodes - RF and Thyristors - TRIACs ...
- Competitive Advantage:
- We specialize in ON Semiconductor NTHD4P02FT1G electronic components. NTHD4P02FT1G can be shipped within 24 hours after order. If you have any demands for NTHD4P02FT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTHD4P02FT1G Product Attributes
Part Number :
NTHD4P02FT1G
Manufacturer :
ON Semiconductor
Description :
MOSFET P-CH 20V 2.2A CHIPFET
Series :
-
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
2.2A (Tj)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
155 mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id :
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
6nC @ 4.5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
300pF @ 10V
FET Feature :
Schottky Diode (Isolated)
Power Dissipation (Max) :
1.1W (Tj)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
ChipFET™
Package / Case :
8-SMD, Flat Lead
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