ON Semiconductor - FQB4N80TM

KEY Part #: K6392665

FQB4N80TM Pricing (USD) [102947pcs Stock]

  • 1 pcs$0.37982
  • 800 pcs$0.34882

Part Number:
FQB4N80TM
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 800V 3.9A D2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs, Thyristors - SCRs - Modules, Transistors - JFETs, Diodes - Rectifiers - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - IGBTs - Modules ...
Competitive Advantage:
We specialize in ON Semiconductor FQB4N80TM electronic components. FQB4N80TM can be shipped within 24 hours after order. If you have any demands for FQB4N80TM, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQB4N80TM Product Attributes

Part Number : FQB4N80TM
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 800V 3.9A D2PAK
Series : QFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Current - Continuous Drain (Id) @ 25°C : 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3.6 Ohm @ 1.95A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 880pF @ 25V
FET Feature : -
Power Dissipation (Max) : 3.13W (Ta), 130W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D²PAK (TO-263AB)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

You May Also Be Interested In