TRS10E65C,S1Q Pricing (USD) [8635pcs Stock]
- 1 pcs$5.24874
- 50 pcs$4.30308
- 100 pcs$3.88327
- 500 pcs$3.25354
- Part Number:
- TRS10E65C,S1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- DIODE SCHOTTKY 650V 10A TO220-2L.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Thyristors - SCRs - Modules, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Arrays, Transistors - JFETs, Transistors - Programmable Unijunction and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TRS10E65C,S1Q electronic components. TRS10E65C,S1Q can be shipped within 24 hours after order. If you have any demands for TRS10E65C,S1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TRS10E65C,S1Q Product Attributes
Part Number :
TRS10E65C,S1Q
Manufacturer :
Toshiba Semiconductor and Storage
Description :
DIODE SCHOTTKY 650V 10A TO220-2L
Series :
-
Part Status :
Active
Diode Type :
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) :
650V
Current - Average Rectified (Io) :
10A (DC)
Voltage - Forward (Vf) (Max) @ If :
1.7V @ 10A
Speed :
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) :
0ns
Current - Reverse Leakage @ Vr :
90µA @ 650V
Capacitance @ Vr, F :
-
Mounting Type :
Through Hole
Package / Case :
TO-220-2
Supplier Device Package :
TO-220-2L
Operating Temperature - Junction :
175°C (Max)
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