[2254pcs Stock]
- Part Number:
- DLA11C-TR-E
- Manufacturer:
- ON Semiconductor
- Detailed description:
- DIODE GEN PURP 200V 1.1A 2SMD.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Thyristors - SCRs, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in ON Semiconductor DLA11C-TR-E electronic components. DLA11C-TR-E can be shipped within 24 hours after order. If you have any demands for DLA11C-TR-E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DLA11C-TR-E Product Attributes
Part Number :
DLA11C-TR-E
Manufacturer :
ON Semiconductor
Description :
DIODE GEN PURP 200V 1.1A 2SMD
Series :
-
Part Status :
Obsolete
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
200V
Current - Average Rectified (Io) :
1.1A
Voltage - Forward (Vf) (Max) @ If :
980mV @ 1.1A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
50ns
Current - Reverse Leakage @ Vr :
10µA @ 200V
Capacitance @ Vr, F :
-
Mounting Type :
Surface Mount
Package / Case :
2-SMD, J-Lead
Supplier Device Package :
SMD
Operating Temperature - Junction :
150°C (Max)
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