Nexperia USA Inc. - BAS316/DG/B3,115

KEY Part #: K6440381

[3838pcs Stock]


    Part Number:
    BAS316/DG/B3,115
    Manufacturer:
    Nexperia USA Inc.
    Detailed description:
    DIODE GEN PURP 100V 250MA TO236.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - TRIACs, Transistors - Special Purpose, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Arrays and Thyristors - SCRs - Modules ...
    Competitive Advantage:
    We specialize in Nexperia USA Inc. BAS316/DG/B3,115 electronic components. BAS316/DG/B3,115 can be shipped within 24 hours after order. If you have any demands for BAS316/DG/B3,115, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BAS316/DG/B3,115 Product Attributes

    Part Number : BAS316/DG/B3,115
    Manufacturer : Nexperia USA Inc.
    Description : DIODE GEN PURP 100V 250MA TO236
    Series : Automotive, AEC-Q101, BAS16
    Part Status : Obsolete
    Diode Type : Standard
    Voltage - DC Reverse (Vr) (Max) : 100V
    Current - Average Rectified (Io) : 250mA (DC)
    Voltage - Forward (Vf) (Max) @ If : 1.25V @ 150mA
    Speed : Fast Recovery =< 500ns, > 200mA (Io)
    Reverse Recovery Time (trr) : 4ns
    Current - Reverse Leakage @ Vr : 500nA @ 80V
    Capacitance @ Vr, F : 1.5pF @ 0V, 1MHz
    Mounting Type : Surface Mount
    Package / Case : TO-236-3, SC-59, SOT-23-3
    Supplier Device Package : TO-236AB
    Operating Temperature - Junction : 150°C (Max)

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