Vishay Semiconductor Diodes Division - MURS160HE3_A/I

KEY Part #: K6457441

MURS160HE3_A/I Pricing (USD) [506068pcs Stock]

  • 1 pcs$0.07309
  • 6,400 pcs$0.06624

Part Number:
MURS160HE3_A/I
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 600V 2A DO214AA. Rectifiers 1A,600V,50ns SMB, UF Rect, SMD
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Power Driver Modules, Thyristors - DIACs, SIDACs, Transistors - Programmable Unijunction, Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays and Transistors - Special Purpose ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division MURS160HE3_A/I electronic components. MURS160HE3_A/I can be shipped within 24 hours after order. If you have any demands for MURS160HE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MURS160HE3_A/I Product Attributes

Part Number : MURS160HE3_A/I
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 600V 2A DO214AA
Series : Automotive, AEC-Q101
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 2A
Voltage - Forward (Vf) (Max) @ If : 1.25V @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 75ns
Current - Reverse Leakage @ Vr : 5µA @ 600V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : DO-214AA, SMB
Supplier Device Package : DO-214AA (SMB)
Operating Temperature - Junction : -65°C ~ 175°C

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