Vishay Semiconductor Diodes Division - FESB16DT-E3/81

KEY Part #: K6456208

FESB16DT-E3/81 Pricing (USD) [84873pcs Stock]

  • 1 pcs$0.46070
  • 800 pcs$0.42754

Part Number:
FESB16DT-E3/81
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 200V 16A TO263AB. Rectifiers 16 Amp 200 Volt 35ns
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Thyristors - SCRs, Transistors - IGBTs - Modules, Thyristors - SCRs - Modules, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Single and Diodes - RF ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division FESB16DT-E3/81 electronic components. FESB16DT-E3/81 can be shipped within 24 hours after order. If you have any demands for FESB16DT-E3/81, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FESB16DT-E3/81 Product Attributes

Part Number : FESB16DT-E3/81
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 200V 16A TO263AB
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Current - Average Rectified (Io) : 16A
Voltage - Forward (Vf) (Max) @ If : 975mV @ 16A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 35ns
Current - Reverse Leakage @ Vr : 10µA @ 200V
Capacitance @ Vr, F : 175pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package : TO-263AB
Operating Temperature - Junction : -65°C ~ 150°C

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