DMG4N60SCT Pricing (USD) [118621pcs Stock]
- 1 pcs$0.31337
- 50 pcs$0.31181
- Part Number:
- DMG4N60SCT
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET NCH 600V 4.5A TO220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Thyristors - DIACs, SIDACs, Diodes - Bridge Rectifiers, Diodes - RF, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - RF, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMG4N60SCT electronic components. DMG4N60SCT can be shipped within 24 hours after order. If you have any demands for DMG4N60SCT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG4N60SCT Product Attributes
Part Number :
DMG4N60SCT
Manufacturer :
Diodes Incorporated
Description :
MOSFET NCH 600V 4.5A TO220
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.5 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
14.3nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
532pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
113W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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