Toshiba Semiconductor and Storage - TK6A65D(STA4,Q,M)

KEY Part #: K6398388

TK6A65D(STA4,Q,M) Pricing (USD) [48206pcs Stock]

  • 1 pcs$0.89473
  • 50 pcs$0.72089
  • 100 pcs$0.64881
  • 500 pcs$0.50464
  • 1,000 pcs$0.41813

Part Number:
TK6A65D(STA4,Q,M)
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N-CH 650V 5A TO-220SIS.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Special Purpose, Diodes - Zener - Arrays, Diodes - Bridge Rectifiers and Diodes - RF ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TK6A65D(STA4,Q,M) electronic components. TK6A65D(STA4,Q,M) can be shipped within 24 hours after order. If you have any demands for TK6A65D(STA4,Q,M), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK6A65D(STA4,Q,M) Product Attributes

Part Number : TK6A65D(STA4,Q,M)
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 650V 5A TO-220SIS
Series : π-MOSVII
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.11 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1050pF @ 25V
FET Feature : -
Power Dissipation (Max) : 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220SIS
Package / Case : TO-220-3 Full Pack

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