Description :
AEC-Q101 GAN FET 100V 13.5 MOHM
Technology :
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
5V
Rds On (Max) @ Id, Vgs :
13.5 mOhm @ 11A, 5V
Vgs(th) (Max) @ Id :
2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs :
4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
407pF @ 50V
Power Dissipation (Max) :
-
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
Die