ON Semiconductor - HUFA76409D3ST

KEY Part #: K6403286

HUFA76409D3ST Pricing (USD) [226678pcs Stock]

  • 1 pcs$0.16317
  • 2,500 pcs$0.15360

Part Number:
HUFA76409D3ST
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 60V 18A DPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Transistors - Special Purpose, Transistors - IGBTs - Modules, Diodes - Zener - Single, Thyristors - SCRs, Transistors - IGBTs - Arrays and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in ON Semiconductor HUFA76409D3ST electronic components. HUFA76409D3ST can be shipped within 24 hours after order. If you have any demands for HUFA76409D3ST, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
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ISO-28000-2007
ISO-45001-2018

HUFA76409D3ST Product Attributes

Part Number : HUFA76409D3ST
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 60V 18A DPAK
Series : Automotive, AEC-Q101, UltraFET™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 63 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±16V
Input Capacitance (Ciss) (Max) @ Vds : 485pF @ 25V
FET Feature : -
Power Dissipation (Max) : 49W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-252AA
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63