RFD12N06RLESM9A Pricing (USD) [229337pcs Stock]
- 1 pcs$0.16209
- 2,500 pcs$0.16128
- Part Number:
- RFD12N06RLESM9A
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 60V 18A DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Arrays, Power Driver Modules, Diodes - Bridge Rectifiers, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in ON Semiconductor RFD12N06RLESM9A electronic components. RFD12N06RLESM9A can be shipped within 24 hours after order. If you have any demands for RFD12N06RLESM9A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RFD12N06RLESM9A Product Attributes
Part Number :
RFD12N06RLESM9A
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 60V 18A DPAK
Series :
UltraFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
63 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Vgs (Max) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
485pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
49W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-252AA
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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