RQ1E100XNTR Pricing (USD) [247410pcs Stock]
- 1 pcs$0.16527
- 3,000 pcs$0.16445
- Part Number:
- RQ1E100XNTR
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- MOSFET N-CH 30V 10A TSMT8.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Single, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - Special Purpose ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor RQ1E100XNTR electronic components. RQ1E100XNTR can be shipped within 24 hours after order. If you have any demands for RQ1E100XNTR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RQ1E100XNTR Product Attributes
Part Number :
RQ1E100XNTR
Manufacturer :
Rohm Semiconductor
Description :
MOSFET N-CH 30V 10A TSMT8
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4V, 10V
Rds On (Max) @ Id, Vgs :
10.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
12.7nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1000pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
550mW (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TSMT8
Package / Case :
8-SMD, Flat Lead
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