STP35N60DM2 Pricing (USD) [17349pcs Stock]
- 1 pcs$2.37537
- 10 pcs$2.12197
- 100 pcs$1.74010
- 500 pcs$1.40906
- 1,000 pcs$1.18837
- Part Number:
- STP35N60DM2
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 600V 28A.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Thyristors - TRIACs, Transistors - JFETs, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Arrays and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in STMicroelectronics STP35N60DM2 electronic components. STP35N60DM2 can be shipped within 24 hours after order. If you have any demands for STP35N60DM2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STP35N60DM2 Product Attributes
Part Number :
STP35N60DM2
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 600V 28A
Series :
MDmesh™ DM2
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
110 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
54nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
2400pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
210W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220
Package / Case :
TO-220-3
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