ON Semiconductor - FDD1600N10ALZ

KEY Part #: K6393398

FDD1600N10ALZ Pricing (USD) [278064pcs Stock]

  • 1 pcs$0.13302
  • 2,500 pcs$0.12743

Part Number:
FDD1600N10ALZ
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N CH 100V 6.8A TO252-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Diodes - Rectifiers - Single, Diodes - Zener - Single, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Arrays, Transistors - JFETs and Power Driver Modules ...
Competitive Advantage:
We specialize in ON Semiconductor FDD1600N10ALZ electronic components. FDD1600N10ALZ can be shipped within 24 hours after order. If you have any demands for FDD1600N10ALZ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDD1600N10ALZ Product Attributes

Part Number : FDD1600N10ALZ
Manufacturer : ON Semiconductor
Description : MOSFET N CH 100V 6.8A TO252-3
Series : PowerTrench®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 160 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id : 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 3.61nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 225pF @ 50V
FET Feature : -
Power Dissipation (Max) : 14.9W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DPAK
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63