BVSS123LT1G Pricing (USD) [996497pcs Stock]
- 1 pcs$0.03712
- 12,000 pcs$0.02123
- Part Number:
- BVSS123LT1G
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 100V 170MA SOT-23-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Transistors - IGBTs - Single, Thyristors - TRIACs, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in ON Semiconductor BVSS123LT1G electronic components. BVSS123LT1G can be shipped within 24 hours after order. If you have any demands for BVSS123LT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BVSS123LT1G Product Attributes
Part Number :
BVSS123LT1G
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 100V 170MA SOT-23-3
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
6 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id :
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
20pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
225mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-23-3
Package / Case :
TO-236-3, SC-59, SOT-23-3
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