TK46A08N1,S4X Pricing (USD) [65859pcs Stock]
- 1 pcs$0.65642
- Part Number:
- TK46A08N1,S4X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 80V 46A TO-220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - TRIACs, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF and Diodes - Zener - Single ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK46A08N1,S4X electronic components. TK46A08N1,S4X can be shipped within 24 hours after order. If you have any demands for TK46A08N1,S4X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK46A08N1,S4X Product Attributes
Part Number :
TK46A08N1,S4X
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 80V 46A TO-220
Series :
U-MOSVIII-H
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
80V
Current - Continuous Drain (Id) @ 25°C :
46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
8.4 mOhm @ 23A, 10V
Vgs(th) (Max) @ Id :
4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs :
37nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2500pF @ 40V
FET Feature :
-
Power Dissipation (Max) :
35W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220SIS
Package / Case :
TO-220-3 Full Pack
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