Diodes Incorporated - DMT68M8LSS-13

KEY Part #: K6394108

DMT68M8LSS-13 Pricing (USD) [376192pcs Stock]

  • 1 pcs$0.09832

Part Number:
DMT68M8LSS-13
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET N-CHANNEL 60V 28.9A 8SO.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - TRIACs, Transistors - Programmable Unijunction, Diodes - Bridge Rectifiers, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays and Transistors - IGBTs - Modules ...
Competitive Advantage:
We specialize in Diodes Incorporated DMT68M8LSS-13 electronic components. DMT68M8LSS-13 can be shipped within 24 hours after order. If you have any demands for DMT68M8LSS-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMT68M8LSS-13 Product Attributes

Part Number : DMT68M8LSS-13
Manufacturer : Diodes Incorporated
Description : MOSFET N-CHANNEL 60V 28.9A 8SO
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 28.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 8.5 mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 31.8nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2107pF @ 30V
FET Feature : -
Power Dissipation (Max) : 1.9W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SO
Package / Case : 8-SOIC (0.154", 3.90mm Width)

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