TN2130K1-G Pricing (USD) [189161pcs Stock]
- 1 pcs$0.20033
- 3,000 pcs$0.19933
- Part Number:
- TN2130K1-G
- Manufacturer:
- Microchip Technology
- Detailed description:
- MOSFET N-CH 300V 0.085A SOT23-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - IGBTs - Single, Transistors - JFETs, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Thyristors - SCRs - Modules, Power Driver Modules and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in Microchip Technology TN2130K1-G electronic components. TN2130K1-G can be shipped within 24 hours after order. If you have any demands for TN2130K1-G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TN2130K1-G Product Attributes
Part Number :
TN2130K1-G
Manufacturer :
Microchip Technology
Description :
MOSFET N-CH 300V 0.085A SOT23-3
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
300V
Current - Continuous Drain (Id) @ 25°C :
85mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V
Rds On (Max) @ Id, Vgs :
25 Ohm @ 120mA, 4.5V
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
50pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
360mW (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-236AB (SOT23)
Package / Case :
TO-236-3, SC-59, SOT-23-3
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