FDB16AN08A0 Pricing (USD) [74271pcs Stock]
- 1 pcs$0.52910
- 800 pcs$0.52646
- Part Number:
- FDB16AN08A0
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 75V 58A TO-263AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Thyristors - SCRs, Power Driver Modules, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays and Transistors - FETs, MOSFETs - Single ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDB16AN08A0 electronic components. FDB16AN08A0 can be shipped within 24 hours after order. If you have any demands for FDB16AN08A0, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDB16AN08A0 Product Attributes
Part Number :
FDB16AN08A0
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 75V 58A TO-263AB
Series :
PowerTrench®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
75V
Current - Continuous Drain (Id) @ 25°C :
9A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
16 mOhm @ 58A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1857pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
135W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D²PAK
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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