DMT8012LSS-13 Pricing (USD) [214990pcs Stock]
- 1 pcs$0.17204
- 2,500 pcs$0.15227
- Part Number:
- DMT8012LSS-13
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CHA 80V 9.7A SO8.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - Special Purpose, Transistors - IGBTs - Arrays, Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMT8012LSS-13 electronic components. DMT8012LSS-13 can be shipped within 24 hours after order. If you have any demands for DMT8012LSS-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMT8012LSS-13 Product Attributes
Part Number :
DMT8012LSS-13
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CHA 80V 9.7A SO8
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
80V
Current - Continuous Drain (Id) @ 25°C :
9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
16.5 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
34nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1949pF @ 40V
FET Feature :
-
Power Dissipation (Max) :
1.5W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-SO
Package / Case :
8-SOIC (0.154", 3.90mm Width)
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