Toshiba Semiconductor and Storage - TK12J60U(F)

KEY Part #: K6400468

TK12J60U(F) Pricing (USD) [22864pcs Stock]

  • 1 pcs$1.98315
  • 50 pcs$1.59357
  • 100 pcs$1.45193
  • 500 pcs$1.17569
  • 1,000 pcs$0.94070

Part Number:
TK12J60U(F)
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N-CH 600V 12A TO-3PN.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Thyristors - SCRs, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - Special Purpose ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TK12J60U(F) electronic components. TK12J60U(F) can be shipped within 24 hours after order. If you have any demands for TK12J60U(F), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK12J60U(F) Product Attributes

Part Number : TK12J60U(F)
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 600V 12A TO-3PN
Series : DTMOSII
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 400 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id : 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 720pF @ 10V
FET Feature : -
Power Dissipation (Max) : 144W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3P(N)
Package / Case : TO-3P-3, SC-65-3