TK100A08N1,S4X Pricing (USD) [24740pcs Stock]
- 1 pcs$1.82891
- 50 pcs$1.47141
- 100 pcs$1.34061
- 500 pcs$1.02990
- 1,000 pcs$0.86859
- Part Number:
- TK100A08N1,S4X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 80V 214A TO220SIS.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Power Driver Modules, Thyristors - SCRs, Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Arrays, Transistors - Special Purpose, Transistors - FETs, MOSFETs - RF and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK100A08N1,S4X electronic components. TK100A08N1,S4X can be shipped within 24 hours after order. If you have any demands for TK100A08N1,S4X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK100A08N1,S4X Product Attributes
Part Number :
TK100A08N1,S4X
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 80V 214A TO220SIS
Series :
U-MOSVIII-H
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
80V
Current - Continuous Drain (Id) @ 25°C :
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.2 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
9000pF @ 40V
FET Feature :
-
Power Dissipation (Max) :
45W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220SIS
Package / Case :
TO-220-3 Full Pack
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