Toshiba Semiconductor and Storage - CUHS10F60,H3F

KEY Part #: K6449061

CUHS10F60,H3F Pricing (USD) [1198992pcs Stock]

  • 1 pcs$0.03085

Part Number:
CUHS10F60,H3F
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
SMALL-SIGNAL SCHOTTKY BARRIER DI. Schottky Diodes & Rectifiers Sml-Signal Schottky 1A 60V 130pF
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Power Driver Modules, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - RF, Thyristors - SCRs and Thyristors - SCRs - Modules ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage CUHS10F60,H3F electronic components. CUHS10F60,H3F can be shipped within 24 hours after order. If you have any demands for CUHS10F60,H3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CUHS10F60,H3F Product Attributes

Part Number : CUHS10F60,H3F
Manufacturer : Toshiba Semiconductor and Storage
Description : SMALL-SIGNAL SCHOTTKY BARRIER DI
Series : -
Part Status : Active
Diode Type : Schottky
Voltage - DC Reverse (Vr) (Max) : 60V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : -
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 40µA @ 60V
Capacitance @ Vr, F : 130pF @ 0V, 1MHz
Mounting Type : Surface Mount
Package / Case : 2-SMD, Flat Lead
Supplier Device Package : US2H
Operating Temperature - Junction : 150°C (Max)

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