1SS196(TE85L,F) Pricing (USD) [1694228pcs Stock]
- 1 pcs$0.02304
- 3,000 pcs$0.02292
- Part Number:
- 1SS196(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- DIODE GEN PURP 80V 100MA SC59-3. Diodes - General Purpose, Power, Switching 0.1A 80V Switching Diode S-Mini High
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Arrays, Thyristors - SCRs, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Modules, Diodes - Rectifiers - Arrays and Thyristors - TRIACs ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage 1SS196(TE85L,F) electronic components. 1SS196(TE85L,F) can be shipped within 24 hours after order. If you have any demands for 1SS196(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1SS196(TE85L,F) Product Attributes
Part Number :
1SS196(TE85L,F)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
DIODE GEN PURP 80V 100MA SC59-3
Series :
-
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
80V
Current - Average Rectified (Io) :
100mA
Voltage - Forward (Vf) (Max) @ If :
1.2V @ 100mA
Speed :
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) :
4ns
Current - Reverse Leakage @ Vr :
500nA @ 80V
Capacitance @ Vr, F :
3pF @ 0V, 1MHz
Mounting Type :
Surface Mount
Package / Case :
TO-236-3, SC-59, SOT-23-3
Supplier Device Package :
SC-59-3
Operating Temperature - Junction :
125°C (Max)
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