APT35GP120B2DQ2G Pricing (USD) [4309pcs Stock]
- 1 pcs$10.05361
- 10 pcs$9.13998
- 25 pcs$8.45448
- 100 pcs$7.38992
- 250 pcs$6.73790
- Part Number:
- APT35GP120B2DQ2G
- Manufacturer:
- Microsemi Corporation
- Detailed description:
- IGBT 1200V 96A 543W TMAX.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Bridge Rectifiers, Diodes - Rectifiers - Single, Power Driver Modules, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in Microsemi Corporation APT35GP120B2DQ2G electronic components. APT35GP120B2DQ2G can be shipped within 24 hours after order. If you have any demands for APT35GP120B2DQ2G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT35GP120B2DQ2G Product Attributes
Part Number :
APT35GP120B2DQ2G
Manufacturer :
Microsemi Corporation
Description :
IGBT 1200V 96A 543W TMAX
Series :
POWER MOS 7®
Part Status :
Active
IGBT Type :
PT
Voltage - Collector Emitter Breakdown (Max) :
1200V
Current - Collector (Ic) (Max) :
96A
Current - Collector Pulsed (Icm) :
140A
Vce(on) (Max) @ Vge, Ic :
3.9V @ 15V, 35A
Power - Max :
543W
Switching Energy :
750µJ (on), 680µJ (off)
Input Type :
Standard
Gate Charge :
150nC
Td (on/off) @ 25°C :
16ns/95ns
Test Condition :
600V, 35A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) :
-
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Package / Case :
TO-247-3 Variant
Supplier Device Package :
-
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