BSD816SNH6327XTSA1 Pricing (USD) [1259547pcs Stock]
- 1 pcs$0.03148
- 3,000 pcs$0.03132
- Part Number:
- BSD816SNH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 20V 1.4A SOT363.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - JFETs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Power Driver Modules, Transistors - Special Purpose and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Infineon Technologies BSD816SNH6327XTSA1 electronic components. BSD816SNH6327XTSA1 can be shipped within 24 hours after order. If you have any demands for BSD816SNH6327XTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSD816SNH6327XTSA1 Product Attributes
Part Number :
BSD816SNH6327XTSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 20V 1.4A SOT363
Series :
OptiMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 2.5V
Rds On (Max) @ Id, Vgs :
160 mOhm @ 1.4A, 2.5V
Vgs(th) (Max) @ Id :
0.95V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs :
0.6nC @ 2.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
180pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
500mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-SOT363-6
Package / Case :
6-VSSOP, SC-88, SOT-363
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