IXYS - IXTN550N055T2

KEY Part #: K6393033

IXTN550N055T2 Pricing (USD) [2945pcs Stock]

  • 1 pcs$16.17380
  • 10 pcs$14.96227
  • 100 pcs$12.77879

Part Number:
IXTN550N055T2
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 55V 550A SOT-227.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Single, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - RF, Transistors - FETs, MOSFETs - Single, Thyristors - SCRs - Modules and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in IXYS IXTN550N055T2 electronic components. IXTN550N055T2 can be shipped within 24 hours after order. If you have any demands for IXTN550N055T2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTN550N055T2 Product Attributes

Part Number : IXTN550N055T2
Manufacturer : IXYS
Description : MOSFET N-CH 55V 550A SOT-227
Series : GigaMOS™, TrenchT2™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 550A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.3 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 595nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 40000pF @ 25V
FET Feature : -
Power Dissipation (Max) : 940W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Chassis Mount
Supplier Device Package : SOT-227B
Package / Case : SOT-227-4, miniBLOC

You May Also Be Interested In