ON Semiconductor - FQD10N20LTM

KEY Part #: K6392670

FQD10N20LTM Pricing (USD) [226092pcs Stock]

  • 1 pcs$0.18272
  • 2,500 pcs$0.18181

Part Number:
FQD10N20LTM
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 200V 7.6A DPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Diodes - RF, Diodes - Rectifiers - Single, Transistors - Special Purpose, Diodes - Bridge Rectifiers, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Arrays and Transistors - FETs, MOSFETs - RF ...
Competitive Advantage:
We specialize in ON Semiconductor FQD10N20LTM electronic components. FQD10N20LTM can be shipped within 24 hours after order. If you have any demands for FQD10N20LTM, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQD10N20LTM Product Attributes

Part Number : FQD10N20LTM
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 200V 7.6A DPAK
Series : QFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 360 mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id : 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 17nC @ 5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 830pF @ 25V
FET Feature : -
Power Dissipation (Max) : 2.5W (Ta), 51W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-252, (D-Pak)
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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