Diodes Incorporated - DMN1017UCP3-7

KEY Part #: K6392814

DMN1017UCP3-7 Pricing (USD) [392732pcs Stock]

  • 1 pcs$0.09418
  • 3,000 pcs$0.08429

Part Number:
DMN1017UCP3-7
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET N-CH 12V 7.5A X3-DSN1010.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Arrays and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in Diodes Incorporated DMN1017UCP3-7 electronic components. DMN1017UCP3-7 can be shipped within 24 hours after order. If you have any demands for DMN1017UCP3-7, Please submit a Request for Quotation here or send us an email:
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ISO-28000-2007
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DMN1017UCP3-7 Product Attributes

Part Number : DMN1017UCP3-7
Manufacturer : Diodes Incorporated
Description : MOSFET N-CH 12V 7.5A X3-DSN1010
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 12V
Current - Continuous Drain (Id) @ 25°C : 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 3.3V
Rds On (Max) @ Id, Vgs : 17 mOhm @ 5A, 3.3V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 16nC @ 3.3V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 1503pF @ 6V
FET Feature : -
Power Dissipation (Max) : 1.47W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : X3-DSN1010-3
Package / Case : 3-XDFN