FDP8D5N10C Pricing (USD) [39860pcs Stock]
- 1 pcs$0.98092
- Part Number:
- FDP8D5N10C
- Manufacturer:
- ON Semiconductor
- Detailed description:
- FET ENGR DEV-NOT REL.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Thyristors - SCRs, Transistors - Special Purpose, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Diodes - Zener - Single ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDP8D5N10C electronic components. FDP8D5N10C can be shipped within 24 hours after order. If you have any demands for FDP8D5N10C, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDP8D5N10C Product Attributes
Part Number :
FDP8D5N10C
Manufacturer :
ON Semiconductor
Description :
FET ENGR DEV-NOT REL
Series :
PowerTrench®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
8.5 mOhm @ 76A, 10V
Vgs(th) (Max) @ Id :
4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs :
34nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2475pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
2.4W (Ta), 107W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220-3
Package / Case :
TO-220-3
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