Toshiba Semiconductor and Storage - TK14N65W,S1F

KEY Part #: K6397856

TK14N65W,S1F Pricing (USD) [30264pcs Stock]

  • 1 pcs$1.49838
  • 10 pcs$1.33929
  • 100 pcs$1.04182
  • 500 pcs$0.84362
  • 1,000 pcs$0.71148

Part Number:
TK14N65W,S1F
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N-CH 650V 13.7A TO-220.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Diodes - Rectifiers - Single, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Arrays and Transistors - Special Purpose ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TK14N65W,S1F electronic components. TK14N65W,S1F can be shipped within 24 hours after order. If you have any demands for TK14N65W,S1F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK14N65W,S1F Product Attributes

Part Number : TK14N65W,S1F
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 650V 13.7A TO-220
Series : DTMOSIV
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 13.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 250 mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 690µA
Gate Charge (Qg) (Max) @ Vgs : 35nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1300pF @ 300V
FET Feature : -
Power Dissipation (Max) : 130W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247
Package / Case : TO-247-3

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