Toshiba Semiconductor and Storage - SSM6N61NU,LF

KEY Part #: K6523082

SSM6N61NU,LF Pricing (USD) [622023pcs Stock]

  • 1 pcs$0.06574
  • 3,000 pcs$0.06541

Part Number:
SSM6N61NU,LF
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET 2N-CH 20V 4A UDFN.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs, Diodes - Zener - Single, Thyristors - SCRs, Transistors - Programmable Unijunction, Transistors - IGBTs - Single, Thyristors - TRIACs and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage SSM6N61NU,LF electronic components. SSM6N61NU,LF can be shipped within 24 hours after order. If you have any demands for SSM6N61NU,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
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SSM6N61NU,LF Product Attributes

Part Number : SSM6N61NU,LF
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET 2N-CH 20V 4A UDFN
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 4A
Rds On (Max) @ Id, Vgs : 33 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 3.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 410pF @ 10V
Power - Max : 2W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-WDFN Exposed Pad
Supplier Device Package : 6-UDFNB (2x2)

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