IXTH6N120 Pricing (USD) [11318pcs Stock]
- 1 pcs$4.02496
- 30 pcs$4.00494
- Part Number:
- IXTH6N120
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 1200V 6A TO-247AD.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs, Transistors - Special Purpose, Transistors - IGBTs - Modules, Diodes - RF and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in IXYS IXTH6N120 electronic components. IXTH6N120 can be shipped within 24 hours after order. If you have any demands for IXTH6N120, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTH6N120 Product Attributes
Part Number :
IXTH6N120
Manufacturer :
IXYS
Description :
MOSFET N-CH 1200V 6A TO-247AD
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1200V
Current - Continuous Drain (Id) @ 25°C :
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.6 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1950pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
300W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247 (IXTH)
Package / Case :
TO-247-3
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