Infineon Technologies - IPP65R225C7XKSA1

KEY Part #: K6398316

IPP65R225C7XKSA1 Pricing (USD) [32137pcs Stock]

  • 1 pcs$1.33532
  • 10 pcs$1.20708
  • 100 pcs$0.92036
  • 500 pcs$0.71583
  • 1,000 pcs$0.59311

Part Number:
IPP65R225C7XKSA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 650V 11A TO-220-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
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Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP65R225C7XKSA1 Product Attributes

Part Number : IPP65R225C7XKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 650V 11A TO-220-3
Series : CoolMOS™ C7
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 225 mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id : 4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 996pF @ 400V
FET Feature : -
Power Dissipation (Max) : 63W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PG-TO220-3
Package / Case : TO-220-3