ZXMN2F30FHQTA Pricing (USD) [663036pcs Stock]
- 1 pcs$0.05579
- 3,000 pcs$0.05025
- Part Number:
- ZXMN2F30FHQTA
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 20V 4.9A SOT23-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Thyristors - TRIACs, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - RF, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - JFETs and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in Diodes Incorporated ZXMN2F30FHQTA electronic components. ZXMN2F30FHQTA can be shipped within 24 hours after order. If you have any demands for ZXMN2F30FHQTA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN2F30FHQTA Product Attributes
Part Number :
ZXMN2F30FHQTA
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 20V 4.9A SOT23-3
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
45 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
4.8nC @ 10V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
452pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
1.4W
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-23-3
Package / Case :
TO-236-3, SC-59, SOT-23-3
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