Part Number :
TK31V60W5,LVQ
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N -CH 600V 30.8A DFN
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
109 mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs :
105nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
3000pF @ 300V
Power Dissipation (Max) :
240W (Tc)
Operating Temperature :
150°C (TA)
Mounting Type :
Surface Mount
Supplier Device Package :
4-DFN-EP (8x8)
Package / Case :
4-VSFN Exposed Pad