IXTY1N100P Pricing (USD) [62346pcs Stock]
- 1 pcs$0.72483
- 70 pcs$0.72122
- Part Number:
- IXTY1N100P
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 1000V 1A TO-252.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single, Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs, Diodes - Zener - Arrays and Transistors - FETs, MOSFETs - Single ...
- Competitive Advantage:
- We specialize in IXYS IXTY1N100P electronic components. IXTY1N100P can be shipped within 24 hours after order. If you have any demands for IXTY1N100P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTY1N100P Product Attributes
Part Number :
IXTY1N100P
Manufacturer :
IXYS
Description :
MOSFET N-CH 1000V 1A TO-252
Series :
Polar™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
15 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id :
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs :
15.5nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
331pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
50W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-252, (D-Pak)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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