ON Semiconductor - NTLUS4C12NTAG

KEY Part #: K6392794

NTLUS4C12NTAG Pricing (USD) [293170pcs Stock]

  • 1 pcs$0.12680
  • 3,000 pcs$0.12616

Part Number:
NTLUS4C12NTAG
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 30V 10.7A UDFN6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Diodes - Zener - Arrays, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Transistors - Special Purpose, Thyristors - TRIACs, Transistors - IGBTs - Modules and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in ON Semiconductor NTLUS4C12NTAG electronic components. NTLUS4C12NTAG can be shipped within 24 hours after order. If you have any demands for NTLUS4C12NTAG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTLUS4C12NTAG Product Attributes

Part Number : NTLUS4C12NTAG
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 30V 10.7A UDFN6
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 3.3V, 10V
Rds On (Max) @ Id, Vgs : 9 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 18nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1172pF @ 15V
FET Feature : -
Power Dissipation (Max) : 630mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 6-UDFN (2x2)
Package / Case : 6-UDFN Exposed Pad

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