SIZ200DT-T1-GE3 Pricing (USD) [192003pcs Stock]
- 1 pcs$0.19264
- Part Number:
- SIZ200DT-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH DUAL 30V.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Diodes - Bridge Rectifiers, Transistors - Programmable Unijunction, Transistors - IGBTs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Zener - Arrays and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SIZ200DT-T1-GE3 electronic components. SIZ200DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ200DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ200DT-T1-GE3 Product Attributes
Part Number :
SIZ200DT-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH DUAL 30V
Series :
TrenchFET® Gen IV
Part Status :
Active
FET Type :
2 N-Channel (Dual)
FET Feature :
Standard
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs :
5.5 mOhm @ 10A, 10V, 5.8 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id :
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
28nC @ 10V, 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1510pF @ 15V, 1600pF @ 15V
Power - Max :
4.3W (Ta), 33W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-PowerWDFN
Supplier Device Package :
8-PowerPair® (3.3x3.3)
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