Microsemi Corporation - APTC80DA15T1G

KEY Part #: K6413165

[13194pcs Stock]


    Part Number:
    APTC80DA15T1G
    Manufacturer:
    Microsemi Corporation
    Detailed description:
    MOSFET N-CH 800V 28A SP1.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - IGBTs - Single, Diodes - Zener - Single, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Transistors - Special Purpose, Thyristors - TRIACs and Transistors - Bipolar (BJT) - Single ...
    Competitive Advantage:
    We specialize in Microsemi Corporation APTC80DA15T1G electronic components. APTC80DA15T1G can be shipped within 24 hours after order. If you have any demands for APTC80DA15T1G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    APTC80DA15T1G Product Attributes

    Part Number : APTC80DA15T1G
    Manufacturer : Microsemi Corporation
    Description : MOSFET N-CH 800V 28A SP1
    Series : -
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 800V
    Current - Continuous Drain (Id) @ 25°C : 28A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 150 mOhm @ 14A, 10V
    Vgs(th) (Max) @ Id : 3.9V @ 2mA
    Gate Charge (Qg) (Max) @ Vgs : 180nC @ 10V
    Vgs (Max) : ±30V
    Input Capacitance (Ciss) (Max) @ Vds : 4507pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 277W (Tc)
    Operating Temperature : -40°C ~ 150°C (TJ)
    Mounting Type : Chassis Mount
    Supplier Device Package : SP1
    Package / Case : SP1