APT1201R4BFLLG Pricing (USD) [4884pcs Stock]
- 1 pcs$9.80480
- 30 pcs$9.75602
- Part Number:
- APT1201R4BFLLG
- Manufacturer:
- Microsemi Corporation
- Detailed description:
- MOSFET N-CH 1200V 9A TO-247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Thyristors - SCRs, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Single, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays and Diodes - Zener - Single ...
- Competitive Advantage:
- We specialize in Microsemi Corporation APT1201R4BFLLG electronic components. APT1201R4BFLLG can be shipped within 24 hours after order. If you have any demands for APT1201R4BFLLG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT1201R4BFLLG Product Attributes
Part Number :
APT1201R4BFLLG
Manufacturer :
Microsemi Corporation
Description :
MOSFET N-CH 1200V 9A TO-247
Series :
POWER MOS 7®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1200V
Current - Continuous Drain (Id) @ 25°C :
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.5 Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id :
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
75nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2030pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
300W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247 [B]
Package / Case :
TO-247-3
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