Vishay Siliconix - SI2316DS-T1-GE3

KEY Part #: K6396463

SI2316DS-T1-GE3 Pricing (USD) [306526pcs Stock]

  • 1 pcs$0.12067
  • 3,000 pcs$0.11355

Part Number:
SI2316DS-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 30V 2.9A SOT23-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - IGBTs - Single, Diodes - RF, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - IGBTs - Arrays ...
Competitive Advantage:
We specialize in Vishay Siliconix SI2316DS-T1-GE3 electronic components. SI2316DS-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI2316DS-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI2316DS-T1-GE3 Product Attributes

Part Number : SI2316DS-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 30V 2.9A SOT23-3
Series : TrenchFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 50 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id : 800mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 215pF @ 15V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3 (TO-236)
Package / Case : TO-236-3, SC-59, SOT-23-3